The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the world’s premier technical conference series for microelectronics and MEMS technology based on silicon carbide.

The aim of the conference is to present and discuss recent progress in crystal growth, characterization and control of material properties, as well as other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors involving III-nitrides and diamond.  The scope will cover, but is not limited to, theoretical and experimental investigations.  New research results relevant to wafer production processes, device fabrication technologies and device applications will also be topics of the conference.

The objective is to promote the development and commercialization of advanced devices and circuits used for energy saving, high-voltage switching, high frequency, high-power amplification and high-temperature operation.  The conference also serves as an international forum for the exchange of ideas on recent scientific and technical issues among researchers and engineers in industrial, academic and public sectors.