The 22nd International Symposium on Power Semiconductor Devices and ICs

Based on the results achieved through the ISPSD symposiums held previously, ISPSD 2010 will be held in Hiroshima City to provide a platform for continued discussion on technological development in the field of power semiconductor devices, which is undergoing a remarkable progress.

Power semiconductor devices are key devices in power electronics, and they are playing a pivotal role in electric and electronic equipment in a wide range of fields including consumer equipment, information and communications equipment, business equipment, industrial equipment, automobile, electric railways, and electric power systems.

In recent years steady improvement has been made in high-voltage, high-power, and low-loss performance of individual devices, and remarkable advancement has been made in fast switching characteristics, and intelligent features of the devices through improved integration and function of power ICs and power modules.

Moreover, research and development of new types of power semiconductor devices, such as devices using super junctions are continuing, and rapid progress is also being made in the development and practical application of new semiconductor materials such as, SiC and GaN. Aggressive research works are continuing in manufacturing processes development and in finding more sophisticated CAD and simulation techniques, and development of new applications.