6th International Workshop on Bulk Nitride Semiconductors

IWBNS is designed to maximize international scientific information exchange between academic, industrial and government scientists on challenges of growth of high quality Group III nitride bulk crystals with low concentrations of structural defects and background impurities.

The IWBNS-VI program will focus on the most potential approaches and related technologies such as: Seeded and unseeded bulk growth methods, fast epitaxial growth, homo-epitaxial growth, doping, surface preparation, lift-off techniques, characterization and properties (thermal, piezoelectric, optical, etc.), device fabrication and characterization of epitaxial structures grown on bulk substrates and thick heteroepitaxial layer.