This year’s Symposium provides a forum for semiconductor industry professionals, researchers, and academia to discuss strategies for implementing high-k and metal gate stack technology into memory (flash, DRAM) and logic (high performance, low standby power) for 22nm node and beyond.

Stacks for advanced high-mobility channels will also be discussed including InGaAs, Graphene and Ge. The Symposium will include developments in “functional” stacks - including stacks for mechanical (MEMS), spin-based and resistance/phase change devices.

The program includes panel discussions, multiple invited and contributed presentations.