The focus of this year's annual symposium is "Functional Stacks for Logic and Memory Devices." The exploration of functional stacks for future (sub-15 nm node) devices will include high-k/metal gate stacks for Si, Ge, III-V high performance MOSFETs; metal/high-k/metal gate stacks for high-k/metal gate for flash memory metals and magnetic material needed for spin-based devices. Sessions on future devices such as fully depleted, non-planar and tunneling transistors will be included. A special session on interface defects in III-V will be included.